BTA40 可控硅

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燃料棒
®
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Table 1: Main Features
DESCRIPTION
Available in high power packages, the BTA/BTB40-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heat-ing regulation, induction motor or for phase control operation in light dimmers, motor speed controllers, ...
Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities.
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS ) complying with UL standards (File ref.:E81734).
Symbol Value Unit I T(RMS)40A V DRM /V RRM 600 and 800
V I GT (Q 1)
50
mA
BTA40, BTA41 and BTB41 Series
40A TRIAC S
REV. 7October 2005STANDARD
Table 2: Order Codes
Part Number Marking BTA40-xxxB See table 8 on page 6
BTA41-xxxBRG BTB41-xxxBRG
BTA40, BTA41 and BTB41 Series
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Table 3: Absolute Maximum Ratings Tables 4: Electrical Characteristics (T j  = 25°C, unless otherwise specified)Table 5: Static Characteristics Symbol Parameter
Value Unit I T(RMS)RMS on-state current (full sine wave)
RD91 / TOP3T c  = 95°C 40A TOP Ins.
T c  = 80°C I TSM Non repetitive surge peak on-state current  (full cycle, T j  initial = 25°C)  F = 50 Hz t = 20 ms 400A F = 60 Hz t = 16.7 ms
420I ²t I ²t Value for fusing
t p  = 10 ms 880
A ²s dI/dt
Critical rate of rise of on-state cur-rent I G  = 2 x I GT  , t r  ≤ 100 ns
刮膜棒F = 120 Hz
T j  = 125°C 50A/µs V DSM /V RSM Non repetitive surge peak off-state voltage
t p  = 10 ms
T j  = 25°C V DSM /V RSM  + 100
V I GM Peak gate current
t p  = 20 µs
T j  = 125°C 8A P G(AV)Average gate power dissipation T j  = 125°C
1W T stg T j
Storage junction temperature range Operating junction temperature range
- 40 to + 150- 40 to + 125
°C
Symbol Test Conditions
Quadrant Value Unit I GT  (1)V D  = 12 V      R L  = 33 Ω
I - II - III IV MAX.50100mA V GT ALL MAX.  1.3V V GD V D  = V DRM    R L  = 3.3 k Ω  T j  = 125°C ALL
MIN.0.2V I H  (2)I T  = 500 mA MAX.80mA I L I G  = 1.2 I GT
I - III - IV
MAX.70mA II 160dV/dt (2)
V D  =  67 %V DRM  gate open
T j  = 125°C MIN.500V/µs (dV/dt)c (2)(dI/dt)c = 20 A/ms
T j  = 125°C
MIN.
10
杨梅采摘机V/µs
Symbol Test Conditions
Value Unit V T  (2)I TM  = 60 A        t p  = 380 µs
T j  = 25°C MAX.  1.55V V t0 (2)Threshold voltage T j  = 125°C MAX.0.85V R d  (2)Dynamic resistance T j  = 125°C MAX.10m ΩI DRM I RRM
V DRM  = V RRM
T j  = 25°C MAX.
5µA T j  = 125°C
5
mA
Note 1: minimum I GT  is guaranted at 5% of I GT  max.Note 2: for both polarities of A2 referenced to A1.
BTA40, BTA41 and BTB41 Series
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Table 6: Thermal resistance Symbol Parameter
Value Unit R th(j-c)Junction to case (AC)RD91 (Insulated) / TOP30.9°C/W TOP3 Insulated 0.6R th(j-a)
Junction to ambient
TOP3 / TOP3 Insulated
50
°C/W
S = Copper surface under tab.
Figure 1: Maximum power dissipation versus RMS on-state current (full cycle)
Figure 2: RMS on-state current versus case temperature (full cycle)
Figure 3: Relative variation of thermal impedance versus pulse duration
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Figure 4: On-state characteristics (maximum
values)
BTA40, BTA41 and BTB41 Series
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Figure 5: Surge peak on-state current versus number of cycles
Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p  < 10 ms and corresponding value of I 2t
Figure 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values)
Figure 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values)
Figure 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c
BTA40, BTA41 and BTB41 Series
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stimulsoftFigure 10: Ordering Information Scheme
Table 7: Product Selector
Part Numbers Voltage (xxx)Sensitivity Type Package 600 V 800 V BTA40-xxxB X X 50 mA Standard RD91BTA41-xxxBRG X X 50 mA Standard TOP3 Ins.BTB41-xxxBRG
X
X
50 mA
Standard
TOP3
BTB: non insulated TOP3 package

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