On-State Drain Current 1
I D(ON) V DS = 10V, V GS = 10V 70 A V GS = 10V, I D = 30A 5 7 Drain-Source On-State
Resistance 1
R DS(ON) V GS = 7V, I D = 24A 6 8 m£Forward Transconductance 1
g fs
磺酸酯V DS = 15V, I D = 30A
16
S
DYNAMIC
Input Capacitance C iss 5000
Output Capacitance
C oss 1800 Reverse Transfer Capacitance C rss
V GS = 0V, V DS = 15V, f = 1MHz 800
pF Total Gate Charge 2
Q g 140
Gate-Source Charge 2 Q gs 40 Gate-Drain Charge 2 Q gd
V DS = 0.5V (BR)DSS , V GS = 10V, I D = 35A
75
nC Turn-On Delay Time 2 t d(on) 7 Rise Time 2
t r V DS = 15V, R L = 1£
7
Turn-Off Delay Time 2
t d(off)
I D ≅ 30A, V GS = 10V, R GS = 2.5£
24
Fall Time 2
t f 6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 25 °C)
Continuous Current I S 75
Pulsed Current 3
I SM 170 A
Forward Voltage 1 V SD
I F = I S , V GS = 0V上海中医
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V
店主站柜台Reverse Recovery Time t rr 37 nS Peak Reverse Recovery Current I RM(REC) I F = I S , dl F /dt = 100A / µS
200 A
Reverse Recovery Charge
Q rr 0.043 µC
1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2¢H .
2
Independent of operating temperature. 3
Pulse width limited by maximum junction temperature.
dlt
REMARK: THE PRODUCT MARKED WITH “P75N02LDG”, DATE CODE or LOT #
Orders for parts with Lead-Free plating can be placed using the PXXXXXXXG parts name.
