General Description
APG80N10P/T use advanced SGT MOSFET technology to
provide low RDS(ON), low gate charge, fast switching
and excellent avalanche characteristics.
This device is specially designed to get better ruggedness
and suitable to use in
Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity or Invertors
Applications
Consumer electronic power supply
Motor control
Synchronous-rectification
Isolated DC
Synchronous-rectification applications
摄影箱vobuProduct ID Pack Marking Qty(PCS)
APG80N10P TO-220-3L APG80N10P XXX YYYY1000
APG80N10T TO-263-3L APG80N10T XXX YYYY1000
at T j=25℃ unless otherwise noted）
Parameter Symbol Value Unit
Drain source voltage V DS100 V
Gate source voltage V GS±20 V Continuous drain current1), T C=25 ℃I D80 A
Pulsed drain current2), T C=25 ℃I D, pulse210 A
125 W
Power dissipation T C=25 ℃P
Single pulsed avalanche energy5)E AS100 mJ Operation and storage temperature T stg，T j-55 to 150 ℃
1
Electrical Characteristics at T j=25 ℃ unless otherwise specified
2 APG80N10P/T R ve1.0 臺灣永源微電子科技有限公司 APG80N10P/T R ve1.0 臺灣永源微電子科技有限公司3
Electrical Characteristics Diagrams
伤流液V , Drain-source voltage (V) DS
Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics
DS
4
◼Test circuits and waveforms
Figure 1,G ate c h arge t e st c i rcuit & w a veform
Figure , 2S w itching t ime t e st c i rcuit & w a veforms
频偏
Figure , 3Unclamped i n ductive s w itching (UIS) t e st c i rcuit & w a veforms
Figure 4, Diode reverse recovery test circuit & waveforms
发光
标识5
