Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra-linear amplifier applications in 50 ohm system s operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA, CDMA or QPSK.
•Third Order Intercept:47 dBm Typ
•Power Gain: 30.5 dB Typ (@ f = 880 MHz)
•Input and Output VSWR v 1.5:1
Features
•Excellent Phase Linearity and Group Delay Characteristics
•Ideal for Feedforward Base Station Applications
•For Use in TDMA, CDMA, QPSK or Analog Systems
•N Suffix Indicates Lead-Free Terminations
采空区处理
方法Table 1. Absolute Maximum Ratings (T C = 25°C unless otherwise noted) Rating Symbol Value Unit
DC Supply Voltage V DD30Vdc
RF Input Power P in+10dBm Storage Temperature Range T stg-40 to +100°C Operating Case Temperature Range T C-20 to +100°C Table 2. Electrical Characteristics (V DD = 26 Vdc, T C = 25°C; 50 Ω System)
Characteristic Symbol Min Typ Max Unit Supply Current I DD—550620mA Power Gain(f = 880 MHz)G p2930.532dB Gain Flatness(f = 800-960 MHz)G F—0.10.3dB Power Output @ 1 dB Compression(f = 880 MHz)P1dB3334—dBm Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)ITO4647—dBm Noise Figure(f = 800-960 MHz)NF— 3.5 4.5dB
Document Number: MHL9236N
Rev. 8, 8/2006 Freescale Semiconductor
Technical Data
2
RF Device Data
Freescale Semiconductor
MHL9236N TYPICAL CHARACTERISTICS
−400
Figure 5. Phase (1), Group Delay (1) versus Temperature
−20
20P O W E R G A I N /R E T U R N L O S S (d B )
Figure 6. Gain Flatness, Phase Linearity
versus Temperature
, P O W E R G A I N (d B )
(P H A S E °)
TEMPERATURE (°C)
1.In Production Test Fixture
(P H A S E L I N E A R I T Y °)
TEMPERATURE (°C)
G p P 1d B (d B m )3335
34.534
33.5
MHL9236N
3
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
I T O (d B m )Figure 7. Power Gain, I DD versus Voltage
VOLTAGE (VOLTS)
30.531.1Figure 8. ITO, P1dB versus Voltage
40
VOLTAGE (VOLTS)
50
Figure 9. Phase (1), Group Delay (1) versus Voltage
VOLTAGE (VOLTS)
Figure 10. Phase Linearity, Gain Flatness
versus Voltage
31.530.731.346G R O U P D E L A Y (n S )
2.002.03
2.01
2.042.02
VOLTAGE (VOLTS)
22
3026
28
24
30.9
I 400650
550700600
D D (m A )45050048
4244
(P H A S E °)
0.05
0.090.110.07
0.080.10
0.0631.7(P H A S E L I N E A R I T Y °)3236
34
3533P 1d B (d B m ), P O W E R G A I N (d B )
, G A I N F L A T N E S S (d B )
G p G F 1.In Production Test Fixture
4
RF Device Data Freescale Semiconductor
MHL9236N PACKAGE DIMENSIONS
pi调节器
STYLE 1:
PIN 1.RF INPUT
2.VDD1
3.VDD2
4.RF OUTPUT
CASE:GROUND CASE 301AP-02
ISSUE E
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