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DESCRIPTION
ADS7886
SLAS492–SEPTEMBER 2005
12-Bit,1-MSPS,MICRO-POWER,MINIATURE SAR ANALOG-TO-DIGITAL CONVERTERS
•Base Band Converters in Radio •1-MHz Sample Rate Serial Device Communication
•12-Bit Resolution •Motor Current/Bus Voltage Sensors in Digital •Zero Latency
Drives
云p
•20-MHz Serial Interface
•Optical Networking (DWDM,MEMS Based •Supply Range:2.35V to 5.25V
Switching)
•
Typical Power Dissipation at 1MSPS:•Optical Sensors
•Battery Powered Systems –3.9mW at 3-V V DD •Medical Instrumentations
–7.5mW at 5-V V DD
•High-Speed Data Acquisition Systems •INL ±1.25LSB Maximum,±0.65LSB (Typical)•
High-Speed Closed-Loop Systems
•DNL ±1LSB Maximum,+0.4/-0.65LSB (Typical)
•Typical AC Performance:72.25dB SINAD,-84dB THD •Unipolar Input Range:0V to V DD •Power Down Current:1µA
•Wide Input Bandwidth:15MHz at 3dB •
6-Pin SOT23and SC70Packages
The ADS7886is a 12-bit,1-MSPS analog-to-digital converter (ADC).The device includes a capacitor based SAR A/D converter with inherent sample and hold.The serial interface in each device is controlled by the CS and SCLK signals for glueless connections with microprocessors and DSPs.The input signal is sampled with the falling edge of CS,and SCLK is used for conversion and serial data output.
The device operates from a wide supply range from 2.35V to 5.25V.The low power consumption of the device makes it suitable for battery-powered applications.The device also includes a powerdown feature for power saving at lower conversion speeds.
The high level of the digital input to the device is not limited to device V DD .This means the digital in
put can go as high as 5.25V when device supply is 2.35V.This feature is useful when digital signals are coming from other circuit with different supply levels.Also this relaxes restriction on power up sequencing.
The ADS7886is available in 6-pin SOT23and SC70packages and is specified for operation from -40°C to 125°C.
Micro-Power Miniature SAR Converter Family
BIT <300KSPS
300KSPS –1.25MSPS
12-Bit ADS7866(1.2V DD to 3.6V DD )ADS7886(2.35V DD to 5.25V DD )10-Bit ADS7867(1.2V DD to 3.6V DD )ADS7887(2.35V DD to 5.25V DD )8-Bit
ADS7868(1.2V DD to 3.6V DD )
ADS7888(2.35V DD to 5.25V DD )
Please be aware that an important notice concerning availability,standard warranty,and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.Copyright ©2005,Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas Instruments standard warranty.Production processing does not necessarily include testing of all parameters.
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ADS7886
SLAS492–SEPTEMBER2005
These devices have limited built-in ESD protection.The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
PACKAGE/ORDERING INFORMATION(1)
MAXIMUM
MAXIMUM NO MISSING PACK-
DIFFER-PACK-TRANSPORT INTEGRAL CODES AT AGE TEMPERATURE PACKAGE ORDERING DEVICE ENTIAL AGE MEDIA LINEARITY RESOLUTION DESIG-RANGE MARKING INFORMATION
LINEARITY TYPE QUANTITY (LSB)(BIT)NATOR
(LSB)
Tape and
reel250
6-Pin
DBV BBAQ
SOT23Tape and
ADS7886SBDBVR
reel3000 ADS7886SB±1.25±112–40°C to125°C
Tape and
烫印膜ADS7886SBDCKT
reel250
6-Pin
DCK BNL
SC70Tape and
ADS7886SBDCKR
reel3000
Tape and
ADS7886SDBVT
reel250
6-Pin
DBV BBAQ
SOT23Tape and
ADS7886SDBVR
reel3000 ADS7886S±2±211–40°C to125°C
Tape and
ADS7886SDCKT
reel250
6-Pin
DCK BNL
SC70Tape and
ADS7886SDCKR
reel3000 (1)For most current package and ordering information,see the Package Option Addendum at the end of this document,or see the TI
website at www.ti.
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ABSOLUTE MAXIMUM RATINGS(1) ELECTRICAL CHARACTERISTICS
ADS7886 SLAS492–SEPTEMBER2005 UNIT
+IN to AGND–0.3V to+V DD+0.3V +V DD to AGND–0.3V to7V Digital input voltage to GND–0.3V to(7V) Digital output to GND–0.3V to(+V DD+0.3V) Operating temperature range–40°C to125°C Storage temperature range–65°C to150°C Junction temperature(T J Max)150°C
Power dissipation,SOT23and SC70packages(T J Max–T A)/θJA
SOT23295.2°C/W
θJA Thermal impedance
SC70351.3°C/W
Vapor phase(60sec)215°C
Lead temperature,soldering
Infrared(15sec)220°C
(1)Stresses above those listed under absolute maximum ratings may cause permanent damage to the device.Exposure to absolute
maximum conditions for extended periods may affect device reliability.
+V
DD =2.35V to5.25V,T
A
=–40°C to125°C,f
(sample)
=1MHz(unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
ANALOG INPUT
Full-scale input voltage span(1)0V DD V
Absolute input voltage range+IN–0.2V DD+0.2V
C I Input capacitance(2)21pF
I lkg Input leakage current T A=125°C40nA SYSTEM PERFORMANCE
Resolution12Bits
ADS7886SB12
No missing codes Bits
ADS7886S11
ADS7886SB–1.25±0.65 1.25
INL Integral nonlinearity LSB(3)
ADS7886S22
ADS7886SB–1+0.4/-0.651
DNL Differential nonlinearity LSB
ADS7886S-22
V DD=2.35V to3.6V–2.5±0.5 2.5
E O Offset error(4)LSB
V DD=4.75V to5.25V-2±0.52
E G Gain error–1.75±0.5 1.75LSB SAMPLING DYNAMICS
Conversion time20-MHz SCLK760800ns
Acquisition time325ns
Maximum throughput rate20-MHz SCLK1MHz
Aperture delay5ns
Step Response160ns
Overvoltage recovery160ns DYNAMIC CHARACTERISTICS微型电磁泵
V DD=2.35V to3.6V,f I=100kHz6971.25
SNR Signal-to-noise ratio dB
V DD=4.75V to5.25V,f I=100kHz7072.25
(1)Ideal input span;does not include gain or offset error.
(2)See Figure28for details on the sampling circuit.
(3)LSB means least significant bit.
(4)Measured relative to an ideal full-scale input.
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ADS7886
SLAS492–SEPTEMBER 2005
ELECTRICAL CHARACTERISTICS (continued)
+V DD =2.35V to 5.25V,T A =–40°C to 125°C,f (sample)=1MHz (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
UNIT V DD =2.35V to 3.6V,f I =100kHz 6971.25SINAD Signal-to-noise and distortion dB V DD =4.75V to 5.25V,f I =100kHz 70
72.25THD Total harmonic distortion (5)f I =100kHz –84dB SFDR
Spurious free dynamic range f I =100kHz 85.5dB Full power bandwidth
At –3dB
15
MHz
DIGITAL INPUT/OUTPUT Logic family —CMOS V IH High-level input voltage V DD =2.35V to 5.25V V DD –0.4
5.25V V DD =5V 0.8V IL Low-level input voltage V V DD =3V 0.4
V OH High-level output voltage I (source)=200µA V DD –0.2
V
V OL Low-level output voltage I (sink)=200µA
0.4POWER SUPPLY REQUIREMENTS
+V DD
Supply voltage
2.35
3.3 5.25V
V DD =2.35V to 3.6V,1-MHz 1.3 1.5throughput
V DD =4.75V to 5.25V,1-MHz 1.5
2Supply current (normal mode)
mA
小蒸箱throughput
V DD =2.35V to 3.6V,static state 1.1V DD =4.75V to 5.25V,static state
1.5SCLK off
1Power down state supply current µA SCLK on (20MHz)200V DD =3V 3.9 4.5Power dissipation at 1-MHz throughput mW V DD =5V 7.5
10V DD =3V 3.3Power dissipation in static state mW V DD =5V
7.5Power up time
0.1µs
Invalid conversions after 1
power up or reset
标志验证网
(5)
Calculated on the first nine harmonics of the input frequency.
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TIMING REQUIREMENTS (see Figure 1and
Figure 2)
ADS7886
SLAS492–SEPTEMBER 2005
All specifications typical at T A =–40°C to 125°C,V DD =2.35V to 5.25V (unless otherwise specified).
(1)3-V Specifications apply from 2.35V to 3.6V,and 5-V specifications apply from 4.75V to 5.25V.(2)With 50-pf load.
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