Dual Precision, Rail-to-Rail Output
Operational Amplifier
AD8698 Rev.0
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infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329. Fax: 781.326.8703© 2004 Analog Devices, Inc. All rights reserved.
FEATURES
Low offset voltage: 100 µV max
Low offset voltage drift: 2µV/°C max
Low input bias current: 700 pA max
Low noise: 8 nV/√Hz
High common-mode rejection: 118 dB min
Wide operating temperature: −40°C to +85°C
No phase reversal
APPLICATIONS
Photodiode amplifier
Sensors and controls
Multipole filters
Integrator
GENERAL DESCRIPTION
The AD8698 is a high precision, rail-to-rail output, low noise, low input bias current operational amplifier. Offset voltage is a respectable 100 µV max and drift over temperature is below
2 µV/°C, eliminating the need for manual offset trimming. The AD8698 is ideal for high impedance sensors, minimizing offset errors due to input bias and offset currents.
The rail-to-rail output maximizes dynamic range in a variety of applications, such as photodiode amplifiers, DAC I/V amplifiers, filters, and ADC input amplifiers.
The AD8698 dual amplifiers are offered in 8-lead MSOP and narrow 8-lead SOIC packages. The MSOP version is available in tape and reel only.
CONNECTION DIAGRAMS
8-Lead SOIC
(R-8)
OUT A
–IN A
+IN A
V–
4
8
7
-
电动操作
机构-
6
9
8-Lead MSOP
(RM-8)
OUT A
–IN A
+IN A
V–
V+
OUT B
–IN B
+IN B
4
8
7
-
-
7
Figure 1.
Rev. 0 | Page 2 of 20
TABLE OF CONTENTS
<3 Absolute 5 5 5 Typical 14 Input .14 Driving .14 15 .15 Low 16 16 Using the AD8698 in Active 16 17 Ordering Guide.. (17)
REVISION HISTORY
4/04—Revision 0: Initial Version
AD8698
Rev. 0 | Page 3 of 20
SPECIFICATIONS
V S = ±15 V, V CM = 0 V (@T A = 25o C, unless otherwise noted.) Table 1.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V OS
20 100 µV
−40°C < T A < +85°C
300 µV Offset Voltage Drift
∆V OS /∆T −40°C < T A < +85°C 0.6 2 µV/°C Input Bias Current I B 700 pA
−40°C < T A < +85°C 1500 pA Input Offset Current I OS 700 pA
−40°C < T A < +85°C 1500 pA
Input Voltage Range
IVR −40°C < T A < +85°C −13.5V 13.5
V Common-Mode Rejection Ratio CMRR V CM = ±13.5 V 118 132 dB Large Signal Voltage Gain A VO R L = 2 k Ω, V O = ±13.5 V 900 1450 V/mV Input Capacitance C DIFF 6.5 pF
C CM 4.6 pF OUTPUT CHARACTERISTICS
Output Voltage Swing (Ref. to GND) V OH I L = 1 mA, −40°C < T A < +85°C 14.85 14.93 V
V OH I L = 5 mA, −40°C < T A < +85°C 14.6 14.8 V (Ref. to GND) V OL I L = 1 mA, −40°C < T A < +85°C −14.93 −14.6 V
V OL I L = 5 mA, −40°C < T A < +85°C
−14.82
−14.5
V
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±2.5 V < V S < ±15 V 114 132 dB Supply Current I SY V O = 0 V远红外烘干炉
2.8
3.2 mA
−40°C < T A < +85°C 3.8 mA Supply Voltage V S −40°C < T A < +85°C ±2.5 ±15 V DYNAMIC PERFORMANCE Slew Rate SR R L = 2 k Ω 0.4 V/µs Gain Bandwidth Product GBP
1 MHz Phase Margin ØO 60 Degrees
NOISE PERFORMANCE
Input Noise Voltage e n p-p 0.1 Hz < f < 10 Hz 0.6 µV p-p Input Voltage Noise Density e n f = 10
Hz 15 nV/√Hz Input Voltage Noise Density e n f = 1 kHz 8 nV/√Hz Current Noise Density
i n
f = 1 kHz
0.2
pA/√Hz
AD8698
Rev. 0 | Page 4 of 20
V S = ±2.5 V, V CM = 0 V (@T A = 25o C, unless otherwise noted.) Table 2.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage V OS
20书立
100
µV
JING液灌溉系统
−40°C < T A < +85°C
300 µV Offset Voltage Drift
∆V OS /∆T
−40°C < T A < +85°C 2 µV/°C Input Bias Current I B 700 pA
−40°C < T A < +85°C 1500 pA Input Offset Current I OS 700 pA
−40°C < T A < +85°C 1500 pA
Input Voltage Range
IVR −40°C < T A < +85°C −1.5
+1.5 V Common-Mode Rejection Ratio CMRR V CM = ±13.5 V 105 120 dB Large Signal Voltage Gain A VO R L = 2 k Ω, V O = ±13.5 V 600 1200 V/mV Input Capacitance C DIFF 6.4 pF
C CM 4.6 pF OUTPUT CHARACTERISTICS
Output Voltage Swing (Ref. to GND) V OH I L = 1 mA, −40°C < T A < +85°C 2.35 2.44 V V OH I L = 5 mA, −40°C < T A < +85°C 2.1 2.29 V (Ref. to GND) V OL I L = 1 mA, −40°C < T A < +85°C −2.43 −2.2 V V OL I L = 5 mA, T A = 25°C −2.15 −1.9 V
I L = 5mA, −40°C<T A <+85°C
−1.6
POWER SUPPLY
Power Supply Rejection Ratio PSRR ±2.5 V < V S < ±15 V 114 132 dB Supply Current I SY V O = 0 V
2.3 2.8 mA
−40°C < T A < +85°C 3.3 mA Supply Voltage Vs −40°C < T A < +85°C ±2.5 ±15 V DYNAMIC PERFORMANCE Slew Rate
SR R L = 2 k Ω 0.4 V/µs Gain Bandwidth Product GBP 1 MHz Phase Margin Øo
60 Degrees NOISE PERFORMANCE
Input Noise Voltage e n p-p 0.1 Hz < f < 10Hz 0.6 µV p-p Input Voltage Noise Density e n f = 10 Hz 15 nV/√Hz Input Voltage Noise Density e n f =1 kHz 8 nV/√Hz Current Noise Density
i n
f = 1 kHz
0.2
pA/√Hz
AD8698
Rev. 0 | Page 5 of 20
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating Supply Voltage ±15 V Input Voltage ±V S Differential Input Voltage ±V S
Output Short-Circuit Duration
to Gnd
Indefinite Storage Temperature Range R, RM Packages
−65°C to +150°C Operating Temperature Range −40°C to +85°C Junction Temperature Range R, RM Packages
−65°C to +150°C Lead Temperature Range
(Soldering, 60 Sec)
+300°C Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE浴室
电视机 θJA is specified for the worst-case conditions, i.e., θJA is specified for devices soldered in circuit boards for surface-mount packages.
Table 4. Thermal Resistance
Package Type θJA θJC Unit MSOP-8 (RM) 210 45 °C/W SOIC-8 (R)
158
43
°C/W
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 1000 V readily accumulate on the human body and test equipment and can discharge without detection. Although th
is product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
